| PART |
Description |
Maker |
| PTFB201402FC PTFB201402FCV1R0XTMA1 PTFB201402FCV1R |
High Power RF LDMOS Field Effect Transistor
|
Infineon Technologies A...
|
| PTF180101M |
High Power RF LDMOS Field Effect Transistor 10 W, 1.0 鈥?2.0 GHz
|
Infineon Technologies AG
|
| PTFA220041M |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
|
Infineon Technologies AG
|
| PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| MAPLST0810-030CF MAPLST0810-030CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
|
MACOM[Tyco Electronics]
|
| MAPLST1820-030CF |
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V
|
Tyco Electronics
|
| MAPLST1900-060CF |
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 60W, 26V
|
Tyco Electronics
|
| MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
